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| hexfet power mosfet notes through are on page 9 features and benefits pqfn 5x6 mm applications ? secondary side synchronous rectification ? inverters for dc motors ? dc-dc brick applications ? boost converters features benefits low rdson (< 13.5mw) lower conduction losses low thermal resistance to pcb (< 1.2c/w) enables better thermal dissipation low profile (<0.9 mm) results in increased power density industry-standard pinout ? 1 v ds 100 v v gs max 20 v r ds(on) max (@v gs = 10v) 13.5 m q g (typical) 58 nc r g (typical) 0.6 i d (@t c(bottom) = 25c) 50 a absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 3.6 0.029 104 max. 11 37 240 20 100 8.6 58 50 v w a c ! form quantity irfh7110trpbf pqfn 5mm x 6mm tape and reel 4000 irfh7110tr2pbf pqfn 5mm x 6mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note ! s d g thermal resistance parameter typ. max. units r ??? 1.2 r ??? 32 c/w r ??? 35 r 10 ??? 22 static @ t j = 25c (unless otherwise specified) parameter min.typ.max.units bv dss drain-to-source breakdown voltage 100 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.09 ??? v/c r ds(on) static drain-to-source on-resistance ??? 10.6 13.5 m v gs(th) gate threshold voltage 2.0 3.0 4.0 v v gs(t h) gate threshold voltage coefficient ??? -9.0 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 74 ??? ??? s q g total gate charge ??? 58 87 q gs1 pre-vth gate-to-source charge ??? 11 ??? q gs2 post-vth gate-to-source charge ??? 3.6 ??? q gd gate-to-drain charge ??? 16 ??? q godr gate charge overdrive ??? 27.4 ??? q sw switch charge (q gs2 + q gd ) ??? 19.6 ??? q oss output charge ??? 17 ??? nc r g gate resistance ??? 0.6 ??? t d(on) turn-on delay time ??? 11 ??? t r rise time ??? 23 ??? t d(off) turn-off delay time ??? 22 ??? t f fall time ??? 18 ??? c iss input capacitance ??? 3240 ??? c oss output capacitance ??? 300 ??? c rss reverse transfer capacitance ??? 140 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 27 41 ns q rr reverse recovery charge ??? 140 210 nc t on forward turn-on time time is dominated by parasitic inductance mosfet symbol na ns a pf nc v ds = 50v ??? v gs = 20v v gs = -20v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma v gs = 10v, i d = 35a ??? ??? 240 ??? ??? 50 conditions max. 110 35 ? = 1.0mhz t j = 25c, i f = 35a, v dd = 50v di/dt = 500a/ s t j = 25c, i s = 35a, v gs = 0v showing the integral reverse p-n junction diode. typ. ??? r g =1.8 v ds = 50v, i d = 35a i d = 35a i d = 35a v gs = 0v v ds = 25v v ds = 16v, v gs = 0v v dd = 50v, v gs = 10v v ds = v gs , i d = 100 a a v gs = 10v v ds = 100v, v gs = 0v, t j = 125c v ds = 100v, v gs = 0v " ! fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 35a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 4.0v vgs top 10v 6.0v 5.5v 5.0v 4.8v 4.5v 4.3v bottom 4.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 4.0v vgs top 10v 6.0v 5.5v 5.0v 4.8v 4.5v 4.3v bottom 4.0v 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 60 s pulse width t j = 25c t j = 150c 0 20406080 q g total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 35a # ! fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100 a i d = 250 a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc l imited by package ! fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f 1 0.1 + - 4 8 12 16 20 v gs , gate-to-source voltage (v) 0 10 20 30 40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 35a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.7a 9.6a bottom 35a $ ! fig 16. for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? !" # $ ? ! % &'& & ? # (( ? &'& & ) ! ' 1k vcc dut 0 l s % ! ! " " " # $ %""& "%$" " "$ " "$ "& " " '()* + " )" " ") *+$ ! " " " "" ",%& " " '() - " )" " ") -$ & ! pqfn 5x6 outline tape and reel note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimens ion des ign to accommodate the component width di mens i on des i gn to accommodate the component l enght di mens i on des i gn to accommodate the component thi ck nes s p i t ch between s ucces s i ve cavi ty center s overall width of the carrier tape des cript ion type package 5 x 6 pqf n note: all dimens ion are nominal diameter r eel qt y width reel (mm) ao (mm) bo (mm) ko (mm) p1 (mm) w quadrant pin 1 (inch) w1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 q1 xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 outline part marking ' ! qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.174mh, r g = 50 , i as = 35a. pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. calculated continuous current based on maximum allowable junction temperature. package is limited to 50a by die-source to lead-frame bonding technology ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je de c je s d47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259) ? updated package outline on page 7. ? updated tape and reel on page 8. ? updated data sheet based on corporate template. ? 0 . ? ? 1 . ? . 101 01 |
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